A 40nm CMOS 12b 200MS/s Single-amplifier Dual-residue Pipelined-SAR ADC

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This work proposes a dual-residue pipelined-SAR ADC, that generates two residue signals from a single amplifier, which eliminates the need for gain-matching calibration. A capacitive interpolating SAR conversion technique is also proposed for the second stage for power efficiency. A prototype ADC fabricated in a 40nm CMOS occupies an active area of 0.026 mm(2) and achieves an SNDR of 62.1 dB at Nyquist and 67.1 dB SFDR under a 0.9 V supply.
Publisher
IEEE
Issue Date
2019-06-11
Language
English
Citation

39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits, pp.C72 - C73

DOI
10.23919/VLSIC.2019.8778005
URI
http://hdl.handle.net/10203/268521
Appears in Collection
EE-Conference Papers(학술회의논문)
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