Design, modeling and signal integrity analysis of 3D X-pointmemory for high performance considering crosstalk and IR drop

Abstract

For the $4^{th}$ industrial revolution, high density and high bandwidth memory are required in various applications. As the semiconductor process technology is developed, in memory hierarchy, the memory performance gap between conventional DRAM and NAND flash memory is widening. The Storage Class Memory (SCM) with high performance and non-volatility are needed to fill the gap. 3D X-Point Memory which is one of the SCM uses Phase Change Memory (PCM) and Ovonic Threshold Switch (OTS) with 2-stacked cross point array structure. Since the narrow space and long interconnection lines with 20 nm process technology, the crosstalk and IR Drop can occur and it decreases the memory endurance and causes the memory operation error. In this paper, 3D X-Point Memory for high performance considering crosstalk and IR drop is designed, modeled and analyzed with Signal Integrity (SI). For the SI analysis, core architecture is designed, PCM and OTS is behaviorally modeled, interconnection RC model and peripheral circuit models are proposed. The designed 3D X-Point memory is simulated, analyzed and verified the high performance considering crosstalk and IR drop.