선택적 에피택시법에 의한 표면 방출형 AlGa/GaAs 반도체 레이저 다이오드의 생산방법
- Assignee
- KAIST
- Country
- JA (Japan)
- Issue Date
- 1995-07-28
- Application Date
- 1988-10-28
- Application Number
- 63-271131
- Registration Date
- 1995-07-28
- Registration Number
- 1955184
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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