선택적 에피택시법에 의한 표면 방출형 AlGa/GaAs 반도체 레이저 다이오드의 생산방법
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 권영세 | ko |
| dc.contributor.author | 유태경 | ko |
| dc.date.accessioned | 2019-04-15T18:35:30Z | - |
| dc.date.available | 2019-04-15T18:35:30Z | - |
| dc.date.issued | 1995-07-28 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/257308 | - |
| dc.title | 선택적 에피택시법에 의한 표면 방출형 AlGa/GaAs 반도체 레이저 다이오드의 생산방법 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 권영세 | - |
| dc.contributor.nonIdAuthor | 유태경 | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 63-271131 | - |
| dc.identifier.patentRegistrationNumber | 1955184 | - |
| dc.date.application | 1988-10-28 | - |
| dc.date.registration | 1995-07-28 | - |
| dc.publisher.country | JA | - |
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