Memory array using mechanical switch and method for operating thereof기계적인 스위치를 이용한 메모리 어레이의 동작방법

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A method for controlling a memory array using a mechanical switch according to the present invention, in which the memory array comprises; a plurality of word lines; a plurality of bit lines intersecting each other with the plurality of word lines; a gate electrode connected to each of the word lines; a drain electrode spaced apart from the gate electrode and connected to a capacitor; and a source electrode comprises: an anchor part spaced apart from the gate electrode and connected to each of the bit lines; a mobile part where a dimple is formed, comprises the steps of: applying a first voltage V1 to the bit line selected from the plurality of bit lines; applying a second voltage V2 greater than a sum of the first voltage V1 and a pull-in voltage Vpi to the word lines selected from the plurality of word lines; and applying a voltage smaller than a sum of a erase voltage Verase and the pull-in voltage Vpi and a voltage greater than a difference between a write voltage Vwrite and the pull-in voltage Vpi to the word lines unselected from the plurality of word lines.
Assignee
KAIST
Country
US (United States)
Issue Date
2010-08-31
Application Date
2008-05-16
Application Number
12122318
Registration Date
2010-08-31
Registration Number
7,787,276
URI
http://hdl.handle.net/10203/254687
Appears in Collection
EE-Patent(특허)
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