Characteristics of particulate generated by dry laser stripping of positive photoresist on glass wafer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김, 진호 | - |
| dc.contributor.author | 김, 상수 | - |
| dc.date.accessioned | 2011-10-25T04:48:47Z | - |
| dc.date.available | 2011-10-25T04:48:47Z | - |
| dc.date.issued | 2005-07 | - |
| dc.identifier.citation | 한국입자에어로졸학회 학술대회 논문집, pp.291-292 | en |
| dc.identifier.uri | http://hdl.handle.net/10203/25462 | - |
| dc.description.abstract | The characteristics of particles during the stripping of photoresist by ns-pulsed UV laser were investigated. For optically transparent substrate like glass wafer, laser irradiation from backside of wafer was more effective for the photoresist stripping than that from front-side of wafer. The difference between irradiation directions was caused by the enhancement of mechanical effect in backward laser irradiation. | en |
| dc.description.sponsorship | This work was supported by the Korea ministry of education for Brain Korea 21 program. | en |
| dc.language.iso | en_US | en |
| dc.publisher | 한국입자에어로졸학회 | en |
| dc.subject | pulsed laser | en |
| dc.subject | dry stripping | en |
| dc.subject | photoresist | en |
| dc.subject | nanoparticle | en |
| dc.title | Characteristics of particulate generated by dry laser stripping of positive photoresist on glass wafer | en |
| dc.type | Article | en |
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