COMPOSITIONAL CONTROL OF PBTIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Abstract

PbTiO3 thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate ratio of precursors while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3 thin film showed a uniform distribution of the Pb, Ti, and C component throughout the bulk of film. When an annealing process was performed at 750-degrees-C under the 02 ambient for 1 h, the Pb/(Pb+Ti) ratio of thin films was reduced from 0.567 to 0.509.