COMPOSITIONAL CONTROL OF PBTIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

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dc.contributor.authorLEE, WGko
dc.contributor.authorWoo, Seong-Ihlko
dc.contributor.authorKIM, JCko
dc.contributor.authorCHOI, SHko
dc.contributor.authorOH, KHko
dc.date.accessioned2019-03-08T00:55:09Z-
dc.date.available2019-03-08T00:55:09Z-
dc.date.created2012-02-06-
dc.date.issued1993-11-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.63, no.18, pp.2511 - 2513-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/250999-
dc.description.abstractPbTiO3 thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate ratio of precursors while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3 thin film showed a uniform distribution of the Pb, Ti, and C component throughout the bulk of film. When an annealing process was performed at 750-degrees-C under the 02 ambient for 1 h, the Pb/(Pb+Ti) ratio of thin films was reduced from 0.567 to 0.509.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectLASER ABLATION-
dc.titleCOMPOSITIONAL CONTROL OF PBTIO3 THIN-FILMS BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION-
dc.typeArticle-
dc.identifier.wosidA1993MD96000020-
dc.type.rimsART-
dc.citation.volume63-
dc.citation.issue18-
dc.citation.beginningpage2511-
dc.citation.endingpage2513-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.110465-
dc.contributor.localauthorWoo, Seong-Ihl-
dc.contributor.nonIdAuthorLEE, WG-
dc.contributor.nonIdAuthorKIM, JC-
dc.contributor.nonIdAuthorCHOI, SH-
dc.contributor.nonIdAuthorOH, KH-
dc.type.journalArticleArticle-
dc.subject.keywordPlusLASER ABLATION-
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