Continuous Heterostructure Field Effect Transistor Model

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dc.contributor.authorMoon, B. J.-
dc.contributor.authorByun, Y. H.-
dc.contributor.authorLee, Kwyro-
dc.contributor.authorShur, M.-
dc.date.accessioned2011-08-22-
dc.date.available2011-08-22-
dc.date.created2012-02-06-
dc.date.issued1990-
dc.identifier.citationProc. Int. Sym. Circuits and Systems, v., no., pp.3069 - 3072-
dc.identifier.urihttp://hdl.handle.net/10203/24951-
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleContinuous Heterostructure Field Effect Transistor Model-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage3069-
dc.citation.endingpage3072-
dc.citation.publicationnameProc. Int. Sym. Circuits and Systems-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorMoon, B. J.-
dc.contributor.nonIdAuthorByun, Y. H.-
dc.contributor.nonIdAuthorShur, M.-

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