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Showing results 1 to 6 of 6

1
Effects of Annealing and Oxidation on the Properties of Tungsten Polycide Films

S.H.Hong; J.H.Lee; C.M.Lee; H.B.Im, 전기전자재료학회논문지, v.3, pp.235, 1990

2
Effects of Annealing of WSi2 in Polycide Structure Formed by LPCVD Method

J.H.Lee; H.B.Im; C.M.Lee, 전기전자재료학회논문지, v.4, pp.263, 1990

3
Effects of Phosphorus Doping Concentration on the Oxidation Rate of Tungsten Polycide(II) - Oxidation of Unannealed Polycide

C.M.Lee; S.B.Han; H.B.Im; J.G.Lee, 전기전자재료학회논문지, v.4, no.2, pp.97 - 104, 1991

4
Effects of Thickness, Doping Concentration and Flow Rate of WF6 on the Electrical Resistivity of Tungsten Silicide Films

C.M.Lee; C.S.Han; J.G.Lee; H.B.Im, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.3, pp.410, 1990

5
Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide During Oxidation

Y.W.Nam; C.M.Lee; H.B.Im; J.G.Lee, 요업학회지, v.27, no.5, pp.645 - 651, 1990

6
Studies on the Nucleation and Growth of Chemical-Vapor-Deposited W on TiN Substrateds

E.S.Kim; C.M.Lee; Lim, Ho Bin, JOURNAL OF MATERIALS SCIENCE AND ENGINEERING, v.17, pp.137 - 142, 1993

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