Browse "RIMS Collection" by Author C.H.Han

Showing results 1 to 12 of 12

1
A New Process for a High Performance IIL

C.H.Han; C.K.Kim; K.S.Seo, JOURNAL OF KIEE, v.18, no.1, pp.51 - 56, 1981-02

2
An Experimental Realization of a Full Adder by Substrate Fed Threshold Logic Structure

C.H.Han; C.K.Kim, ELECTRONICS LETTERS, v.1916, 1983-08

3
Analytical Delay-Time Modeling of BICMOS Buffers

H.D.Lee; I.S.Jho; C.H.Han, 전자공학회논문지 B, v.30, no.1, 1993-01

4
DEVICE CHARACTERIZATION OF L-TYPE MOS-TRANSISTORS

C.H.Han, SOLID-STATE ELECTRONICS, v.33, no.7, pp.799 - 804, 1990-07

5
Direct Growing of Lightly Doped Epitaxial Silicon without Misfit Dislocation on Heavily Boron-Doped Silicon Layer

H.J.Lee; C.S.Kim; C.H.Han; Kim, Choong Ki, APPLIED PHYSICS LETTERS, v.65, no.17, pp.2139 - 2141, 1994-10

6
Formation of Self-aligned Holes in an Arbitrary pattern in Silicon Substrate

H.D.Lee; H.J.Lee; Kim, Choong Ki; C.H.Han, APPLIED PHYSICS LETTERS, v.66, no.24, pp.3272 - 3274, 1995-06

7
Heavily Boron-Doped Silicon Membranes with Enhanced Mechanical Properties for X-Ray Mask Substrates

H.J.Lee; C.H.Han; Kim, Choong Ki, APPLIED PHYSICS LETTERS, v.65, no.11, pp.1385 - 1387, 1994-09

8
High Performance EEPROMs Using N- and P-Channel Polysilicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Oxide

N.I.Lee; J.W. Lee; C.H.Han, IEEE ELECTRON DEVICE LETTERS, v.20, no.1, pp.15 - 17, 1999-01

9
High Performance Low Temperature Polysilicon Thin Film Transistor Using ECR Plasma Thermal Oxide as Gate Insulator

J.Y.Lee; C.H.Han; Kim, Choong Ki, IEEE ELECTRON DEVICE LETTERS, v.15, no.8, pp.301 - 303, 1994-08

10
Improved Stability of Short-Channel Hydrogenated N-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin ECR N2O-Plasma Gate Oxide

J.W.Lee; N.I.Lee; C.H.Han, IEEE ELECTRON DEVICE LETTERS, v.19, no.12, pp.458 - 458, 1998-12

11
Sidewall Effects in Oxide-Walled Emitter Bipolar Transistors

C.H.Han; J.S.Park; H.S.Rhee; J.H.Lee, KITE JOURNAL OF ELECTRONICS ENGINEERING, v.3, no.2, pp.28 - 33, 1992-11

12
Stability of Hydrogenated P-Channel Polycrystalline Silicon Thin Film Transistors with Electron Cyclotron Resonance N2O-Plasma Gate Oxide

J.W.Lee; N.I.Lee; C.H.Han, IEEE ELECTRON DEVICE LETTERS, v.20, no.1, 1999-01

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