NON-VOLATILE MEMORY DEVICE AND MOSFET USING GRAPHENE GATE ELECTRODE
Disclosed herein is a method of remarkably improving the memory characteristics of a non-volatile memory device and the device reliability of the MOSFET using graphene which is a novel material that has a high work function and does not cause the deterioration of a lower insulating film.
- Assignee
- KAIST
- Country
- US (United States)
- Issue Date
- 2014-01-28
- Application Date
- 2012-01-03
- Application Number
- 13342282
- Registration Date
- 2014-01-28
- Registration Number
- 8638614
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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