NON-VOLATILE MEMORY DEVICE AND MOSFET USING GRAPHENE GATE ELECTRODE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.contributor.author | Park, Jong Kyung | ko |
| dc.date.accessioned | 2017-12-20T10:53:15Z | - |
| dc.date.available | 2017-12-20T10:53:15Z | - |
| dc.date.issued | 2014-01-28 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/232989 | - |
| dc.description.abstract | Disclosed herein is a method of remarkably improving the memory characteristics of a non-volatile memory device and the device reliability of the MOSFET using graphene which is a novel material that has a high work function and does not cause the deterioration of a lower insulating film. | - |
| dc.title | NON-VOLATILE MEMORY DEVICE AND MOSFET USING GRAPHENE GATE ELECTRODE | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Park, Jong Kyung | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 13342282 | - |
| dc.identifier.patentRegistrationNumber | 8638614 | - |
| dc.date.application | 2012-01-03 | - |
| dc.date.registration | 2014-01-28 | - |
| dc.publisher.country | US | - |
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