Semiconductor element, method for fabricating the same, and semiconductor device including the same낮은 일함수의 탄화에르븀(란탄족) 게이트 전극을 갖는 반도체 소자를 제작하는 방법

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A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate dielectric layer; and an intermediate layer formed between the gate dielectric layer and the flat band voltage adjusting layer. A negative flat band voltage generated at the intermediate layer and a positive flat band voltage generated between the substrate and the gate dielectric layer may offset each other.
Assignee
KAIST
Country
US (United States)
Issue Date
2016-09-20
Application Date
2015-08-17
Application Number
14828168
Registration Date
2016-09-20
Registration Number
9450064
URI
http://hdl.handle.net/10203/230434
Appears in Collection
EE-Patent(특허)
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