Method for growing high-quality graphene layer

Abstract

A method of forming a high-quality graphene layer including forming a board layer; forming a stress reduction layer on the board layer; forming a metal catalyst layer on the stress reduction layer, the metal catalyst layer functioning as a catalyst for forming the graphene layer; and growing a graphene layer on the metal catalyst layer. The stress reduction layer reduces the stress of the metal thin film, thus, improving crystallinity and surface roughness of the metal thin film, and thereby effectively forming a high-quality graphene layer.