Method for growing high-quality graphene layer그래핀 형성 방법

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dc.contributor.author조병진ko
dc.contributor.author문정훈ko
dc.date.accessioned2017-12-20T02:12:53Z-
dc.date.available2017-12-20T02:12:53Z-
dc.date.issued2016-08-30-
dc.identifier.urihttp://hdl.handle.net/10203/230380-
dc.description.abstractA method of forming a high-quality graphene layer including forming a board layer; forming a stress reduction layer on the board layer; forming a metal catalyst layer on the stress reduction layer, the metal catalyst layer functioning as a catalyst for forming the graphene layer; and growing a graphene layer on the metal catalyst layer. The stress reduction layer reduces the stress of the metal thin film, thus, improving crystallinity and surface roughness of the metal thin film, and thereby effectively forming a high-quality graphene layer.-
dc.titleMethod for growing high-quality graphene layer-
dc.title.alternative그래핀 형성 방법-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthor조병진-
dc.contributor.nonIdAuthor문정훈-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber14132121-
dc.identifier.patentRegistrationNumber9428829-
dc.date.application2013-12-18-
dc.date.registration2016-08-30-
dc.publisher.countryUS-
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EE-Patent(특허)
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