DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Kang, Min-Ho | ko |
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2017-04-17T07:43:30Z | - |
dc.date.available | 2017-04-17T07:43:30Z | - |
dc.date.created | 2017-04-04 | - |
dc.date.created | 2017-04-04 | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.1, pp.Q1 - Q5 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223370 | - |
dc.description.abstract | This paper demonstrates a breakthrough for DRAM scaling: A vertically integrated gate-all-around (GAA) silicon nanowire (SiNW) channel-based dynamic random access memory (DRAM) without a cell capacitor for data storage, i.e., a zero-capacitor DRAM unlike the conventional DRAM. Vertical integration of the SiNW was attained by a one-route all-dry etching process (ORADEP), resulting in stiction-free stability and simplicity in the fabrication process. High performance that is suitable for high packing density integration is presented with vertically integrated multiple channels, which reveals a potential for an ultimate scaling of DRAM toward the end of the roadmap. (C) The Author(s) 2016. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | FIELD-EFFECT TRANSISTOR | - |
dc.subject | MOSFETS | - |
dc.subject | PERFORMANCE | - |
dc.subject | 1T-DRAM | - |
dc.subject | CHANNEL | - |
dc.title | Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory | - |
dc.type | Article | - |
dc.identifier.wosid | 000393981600018 | - |
dc.identifier.scopusid | 2-s2.0-85009738457 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | Q1 | - |
dc.citation.endingpage | Q5 | - |
dc.citation.publicationname | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1149/2.0011701jss | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kang, Min-Ho | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | 1T-DRAM | - |
dc.subject.keywordPlus | CHANNEL | - |
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