An on-the-fly self-healing device is experimentally demonstrated for sustainability of space electronics. A high temperature generated by Joule heating in a gate electrode provides on-chip annealing of damages induced by ionizing radiation, hot carrier, and tunneling stress. With the healing process, a highly scaled silicon nanowire gate-all-around device shows improved long-term reliability in logic, floating body DRAM, and charge-trap Flash. A thermally isolated gate structure is proposed to enhance the self-healing effect.