Multilevel Resistive Switching Memory based on Two-Dimensional (2D) Nanomaterials

Abstract

We demonstrated a multilevel resistive switching memory based on Graphene oxide (GO) embedded with MoS2 nano-sheets. The stacks of GO/MoS2/GO were successfully fabricated by simple spin-coating process. This structure results in excellent non-volatile memory characteristics at least 4 multiple resistance states. Furthermore, switching mechanism was revealed by space charge limited conduction theory (SCLC).