Multilevel Resistive Switching Memory based on Two-Dimensional (2D) Nanomaterials
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Gwang Hyuk | ko |
| dc.contributor.author | Jang, Byung Chul | ko |
| dc.contributor.author | Woo, Myung Hun | ko |
| dc.contributor.author | Choi, Sung-Yool | ko |
| dc.date.accessioned | 2016-05-12T03:45:50Z | - |
| dc.date.available | 2016-05-12T03:45:50Z | - |
| dc.date.created | 2016-02-18 | - |
| dc.date.created | 2016-02-18 | - |
| dc.date.issued | 2016-02-22 | - |
| dc.identifier.citation | 제23회 한국반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/207275 | - |
| dc.description.abstract | We demonstrated a multilevel resistive switching memory based on Graphene oxide (GO) embedded with MoS2 nano-sheets. The stacks of GO/MoS2/GO were successfully fabricated by simple spin-coating process. This structure results in excellent non-volatile memory characteristics at least 4 multiple resistance states. Furthermore, switching mechanism was revealed by space charge limited conduction theory (SCLC). | - |
| dc.language | Korean | - |
| dc.publisher | 한국반도체연구조합 | - |
| dc.title | Multilevel Resistive Switching Memory based on Two-Dimensional (2D) Nanomaterials | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제23회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 강원도(하이원리조트) | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Choi, Sung-Yool | - |
| dc.contributor.nonIdAuthor | Shin, Gwang Hyuk | - |
| dc.contributor.nonIdAuthor | Jang, Byung Chul | - |
| dc.contributor.nonIdAuthor | Woo, Myung Hun | - |
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