Investigation of sputter-deposited Al-2at.%Cu layers by means of the tomographic atom probe (TAP)
Sputter-deposited Al-2at.%Cu layers have been investigated with respect to their microstructure and the spatial distribution of the elements using the tomographic atom probe. Al grains show columnar shape in the as-sputtered state, where the matrix is supersaturated with Cu. Upon annealing at temperatures between 150 and 350 degrees C, a significant decrease in the average Cu concentration is measured within the grains. Neither second phase formation within the Al matrix nor Cu enrichment at the surface or at the layer/ substrate interface have been detected, suggesting segregation of Cu atoms in Al grain boundaries. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Issue Date
- 2005-08
- Language
- English
- Article Type
- Article
- Keywords
CU THIN-FILMS; AL-CU; PRECIPITATION; ELECTROMIGRATION; ALUMINUM; COPPER; DISSOLUTION; SEGREGATION; DIFFUSION; KINETICS
- Citation
SCRIPTA MATERIALIA, v.53, no.3, pp.323 - 327
- ISSN
- 1359-6462
- Appears in Collection
- MS-Journal Papers(저널논문)
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