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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868, 2018-05 | |
| Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates Shim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; Kim, Sang-Hyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.3, pp.1253 - 1257, 2018-03 | |
| Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates Ju, Gunwu; Kim, Hansung; Shim, Jae-Phil; Kim, Seong Kwang; Lee, Byeong-Hyeon; Won, Sung Ok; Kim, Sanghyeon; Kim, Hyung-jun, THIN SOLID FILMS, v.649, pp.38 - 42, 2018-03 | |
| Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.9, pp.3594 - 3601, 2017-09 | |
| Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si Shim, Jae-Phil; Kim, Seong Kwang; Kim, Hansung; Ju, Gunwu; Lim, Heejeong; Kim, SangHyeon; Kim, Hyung-jun, APL MATERIALS, v.6, no.1, 2018-01 | |
| Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong, SOLID-STATE ELECTRONICS, v.122, pp.8 - 12, 2016-08 | |
| Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong, APPLIED PHYSICS LETTERS, v.110, no.4, 2017-01 | |
| Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.37, no.10, pp.1261 - 1263, 2016-10 | |
| Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors Yoo, Han Bin; Kim, Seong Kwang; Kim, Junyeap; Yu, Jintae; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.20, no.7, pp.4287 - 4291, 2020-07 |
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