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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; Jevasuwan, Wipakorn; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.4, pp.456 - 462, 2013-12 | |
| Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; Jevasuwan, Wipakorn; Maeda, Tatsuro; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.103, no.14, 2013-09 | |
| Optical design of ZnO-based antireflective layers for enhanced GaAs solar cell performance Lee, Hye Jin; Lee, Jae Won; Kim, Hee Jun; Jung, Dae-Han; Lee, Ki-Suk; Kim, Sang Hyeon; Geum, Dae-myeong; Kim, Chang Zoo; Choi, Won Jun; Baik, Jeong Min, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.4, pp.2906 - 2912, 2016-01 | |
| Indium-tin-oxide/GaAs Schottky barrier solar cells with embedded InAs quantum dots Kim, Ho Sung; Park, Min Su; Kim, Sang Hyeon; Park, Suk In; Song, Jin Dong; Kim, Sang Hyuck; Choi, Won Jun; Park, Jung Ho, THIN SOLID FILMS, v.604, pp.81 - 84, 2016-04 | |
| In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide Kim, Sang Hyeon; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun, IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.451 - 453, 2015-05 | |
| Mechanically Robust, Stretchable Solar Absorbers with Submicron-Thick Multilayer Sheets for Wearable and Energy Applications Lee, Hye Jin; Jung, Dae-Han; Kil, Tae-Hyeon; Kim, Sang Hyeon; Lee, Ki-Suk; Baek, Seung-Hyub; Choi, Won Jun; Baik, Jeong Min, ACS APPLIED MATERIALS & INTERFACES, v.9, no.21, pp.18061 - 18068, 2017-05 | |
| Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors Roh, Ii Pyo; Kim, Sang Hyeon; Song, Yun Heub; Song, Jin Dong, CURRENT APPLIED PHYSICS, v.17, no.3, pp.417 - 421, 2017-03 | |
| Influence of interface traps inside the conduction band on the capacitance-voltage characteristics of InGaAs metal-oxide-semiconductor capacitors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Iida, Ryo; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS EXPRESS, v.9, no.11, 2016-11 |