1 | Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide During Oxidation Y.W.Nam; C.M.Lee; H.B.Im; J.G.Lee, 요업학회지, v.27, no.5, pp.645 - 651, 1990 |
2 | Studies on the Nucleation and Growth of Chemical-Vapor-Deposited W on TiN Substrateds E.S.Kim; C.M.Lee; Lim, Ho Bin, JOURNAL OF MATERIALS SCIENCE AND ENGINEERING, v.17, pp.137 - 142, 1993 |
3 | Effects of Thickness, Doping Concentration and Flow Rate of WF6 on the Electrical Resistivity of Tungsten Silicide Films C.M.Lee; C.S.Han; J.G.Lee; H.B.Im, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.3, pp.410, 1990 |
4 | Effects of Annealing and Oxidation on the Properties of Tungsten Polycide Films S.H.Hong; J.H.Lee; C.M.Lee; H.B.Im, 전기전자재료학회논문지, v.3, pp.235, 1990 |
5 | Effects of Annealing of WSi2 in Polycide Structure Formed by LPCVD Method J.H.Lee; H.B.Im; C.M.Lee, 전기전자재료학회논문지, v.4, pp.263, 1990 |
6 | Effects of Phosphorus Doping Concentration on the Oxidation Rate of Tungsten Polycide(II) - Oxidation of Unannealed Polycide C.M.Lee; S.B.Han; H.B.Im; J.G.Lee, 전기전자재료학회논문지, v.4, no.2, pp.97 - 104, 1991 |