Light Response of Top Gate InGaZnO Thin Film Transistor

Abstract

The light stability of top gate indium gallium zinc oxide (IGZO) thin film transistor (TFT) has been investigated under gate bias and constant current stress to explore the possibility of active matrix display applications. While the halogen lamp irradiation onto the device under positive gate bias stress caused just -0.18 V of threshold voltage shift (Delta V-th), it resulted in -15.1 V shift under negative gate bias stress. When the white light extracted from the halogen lamp of 100 mu W/cm(2) power illuminated the device under constant current stress, operation voltage shifted just -0.05 V for 21 h. The result shows good promise for the application of highly stable IGZO TFT to active matrix organic light emitting diodes (AMOLEDs). (c) 2011 The Japan Society of Applied Physics