Showing results 1 to 4 of 4
Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking Lee, Kayoung; Kim, Seyoung; Points, M. S.; Beechem, T. E.; Ohta, Taisuke; Tutuc, E., NANO LETTERS, v.11, no.9, pp.3624 - 3628, 2011-09 |
Quantum Hall effect in Bernal stacked and twisted bilayer graphene grown on Cu by chemical vapor deposition Fallahazad, Babak; Hao, Yufeng; Lee, Kayoung; Kim, Seyoung; Ruoff, R. S.; Tutuc, E., PHYSICAL REVIEW B, v.85, no.20, 2012-05 |
Scaling of Al2O3 dielectric for graphene field-effect transistors Fallahazad, B.; Lee, K.; Lian, G.; Kim, S.; Corbet, C. M.; Ferrer, D. A.; Colombo, L.; et al, APPLIED PHYSICS LETTERS, v.100, no.9, 2012-02 |
Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at nu=0 in High Magnetic Fields Kim, Seyoung; Lee, Kayoung; Tutuc, E., PHYSICAL REVIEW LETTERS, v.107, no.1, 2011-06 |
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