Scaling of Al2O3 dielectric for graphene field-effect transistors

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We investigate the scaling of Al2O3 dielectric on graphene by atomic layer deposition (ALD) using ultra-thin, oxidized Ti and Al films as nucleation layers. We show that the nucleation layer significantly impacts the dielectric constant (k) and morphology of the ALD Al2O3, yielding k = 5.5 and k = 12.7 for Al and Ti nucleation layers, respectively. Transmission electron microscopy shows that Al2O3 grown using the Ti interface is partially crystalline, while Al2O3 grown on Al is amorphous. Using a spatially uniform 0.6 nm-thick Ti nucleation layer, we demonstrate graphene field-effect transistors with top dielectric stacks as thin as 2.6 nm. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3689785]
Publisher
AMER INST PHYSICS
Issue Date
2012-02
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.100, no.9

ISSN
0003-6951
DOI
10.1063/1.3689785
URI
http://hdl.handle.net/10203/280821
Appears in Collection
EE-Journal Papers(저널논문)
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