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1
Effect of high pressure anneal on switching dynamics of ferroelectric hafnium zirconium oxide capacitors

Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, JOURNAL OF APPLIED PHYSICS, v.129, no.24, 2021-06

2
Influence of high pressure annealing conditions on ferroelectric and interfacial properties of Zr rich MFM capacitors = Zr 함량에 따른 MFM 캐패시터의 강유전성 및 계면 특성에 대한 고압 열처리의 영향link

Buyantogtokh, Batzorig; Jeon, Sanghun; et al, 한국과학기술원, 2021

3
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors

Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04

4
Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process

Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01

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