Browse "School of Electrical Engineering(전기및전자공학부)" by Author Ang, CH
Showing results 1 to 21 of 21
| A comparative study of radiation- and stress-induced leakage currents in thin gate oxides Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.15, no.10, pp.961 - 964, 2000-10 |
| A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide Cho, Byung Jin; Ang, CH; Ling, CH; Cheng, ZY, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.254 - 254, 2000-08-28 |
| Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12 |
| Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4, 2000-12 |
| Characterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18µm Technology and Beyond Cho, Byung Jin; Tan, SS; Ang, CH; Lek, CM; Chen, T; See, A; Chan, L, 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.254 - 254, 2002-07-08 |
| Does short wavelength lithography process degrade the integrity of thin gate oxide? Kim, SJ; Cho, Byung Jin; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; et al, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000-10 |
| Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide Cho, Byung Jin; Lek, CM; Loh, WY; Ang, CH; Lin, W; Tan, YL; Zhen, JZ; et al, 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.0 - 0, 2002-07-08 |
| Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si Yu, HY; Li, MF; Cho, Byung Jin; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; et al, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07 |
| Energy gap and band alignment of (HfO2)x(Al2O3)1-x on (100) Si by XPS Cho, Byung Jin; Yu, HY; Li, MF; Kwong, DL; Pan, JS; Ang, CH; Zheng, JZ, 2002 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2002-12-17 |
| Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
| Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs Lek, CM; Cho, Byung Jin; Ang, CH; Tan, SS; Loh, WY; Zhen, JZ; Lap, C, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28, 2002-06 |
| Localized oxide degradation in ultrathin gate dielectric and its statistical analysis Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04 |
| Negative bias temperature instability on plasma-nitrided silicon dioxide film Ang, CH; Lek, CM; Tan, SS; Cho, Byung Jin; Chen, TP; Lin, WH; Zhen, JZ, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316, 2002-03 |
| Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876, 2000-09 |
| Progressive breakdown statistics in ultra-thin silicon dioxides Cho, Byung Jin; Loh, WY; Li, MF; Chan, DSH; Ang, CH; Zhen, ZJ; Kwong, DL, 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.157 - 157, 2003-07-08 |
| Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides Ang, CH; Ling, CH; Cho, Byung Jin; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11 |
| Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jin, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759, 2000-07 |
| Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jin; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09 |
| Reliability of thin gate oxides irradiated under X-ray lithography conditions Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04 |
| Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jin, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04 |
| Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
Discover
Open Access
- 573 OA Article
Date issued
- 4,866 2020 - 2024
- 18,943 2010 - 2019
- 15,019 2000 - 2009
- 7,644 1990 - 1999
- 2,391 1980 - 1989