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Showing results 1 to 6 of 6

1
A varactor-tuned MMIC VCO using InP-based RTD/HBT technology

Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.45, no.5, pp.408 - 411, 2005-06

2
Bias dependence of intermodulation distortion asymmetry in heterojunction bipolar transistor using nonlinear large-signal model

Park, HM; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.42, no.9A, pp.5438 - 5444, 2003-09

3
Large-signal modeling of InP/InGaAs single heterojunction bipolar transistors including thermal and impact ionization effects = 열효과와 Impact ionization 효과를 포함한 InP/InGaAs 단일 이종접합 바이폴라 트랜지스터 대신호 모델링link

Kim, Tae-Ho; 김태호; et al, 한국과학기술원, 2002

4
Novel extraction method including self-heating and ambient temperature effects for a large-signal model of a HBT

Park, HM; Koh, K; Hong, Songcheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1025 - 1035, 2002-12

5
RF power amplifiers using magnetically coupled line transformers = 자기적으로 결합된 전송선을 이용한 초고주파 전력 증폭기link

Lee, Dong-Ho; 이동호; et al, 한국과학기술원, 2007

6
Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure using the redox solution of I-2/KI

Kim, DH; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, no.3A, pp.253 - 255, 1997-03

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