DSpace at KOASAS: Browsing DSpace

DSpace at KOASAS

Browsing DSpace

Browse "School of Electrical Engineering(전기및전자공학부)" by Subject SiGe

Sort by:
In order:
Results/Page
Authors/Record:

Showing results 1 to 9 of 9

1	A 60-GHz variable gain amplifier with low phase and OP1dB variation Byeon, Chul Woo; Park, Chul Soon, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.62, no.2, pp.696 - 700, 2020-02
2	Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier Mheen, B; Song, YJ; Kang, JY; Shim, KH; Hong, Songcheol, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.7, no.4-6, pp.375 - 378, 2004-08
3	Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers Rieh, JS; Klotzkin, D; Qasaimeh, Q; Lu, LH; Yang, Kyounghoon; Katehi, LPB; Bhattacharya, P; et al, IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417, 1998-03
4	SiGe HBT 소자 소신호 모델링과 RF Transmitter단 설계 = SiGe HBT small signal modeling and design of RF transmitter part link 윤명훈; Yoon, Myung-Hoon; et al, 한국과학기술원, 2000
5	Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology Rieh, JS; Qasaimeh, O; Lu, LH; Yang, Kyounghoon; Katehi, LPB; Bhattacharya, P; Croke, ET, IEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.2, pp.63 - 65, 1998-02
6	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12
7	Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications Mheen, B; Song, YJ; Kang, JY; Hong, Songcheol, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08
8	Study of quasi-two-dimensional hole gas in Si/SixGe1-x/Si quantum wells Cheon, SH; Lee, SC; Hong, Songcheol; Yoo, KH, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.849 - 852, 1996-02
9	Ultrathin-body SOI MOSFET for deep-sub-tenth micron era Choi, Yang-Kyu; Asano, K; Lindert, N; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255, 2000-05

Discover

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

Communities & Collections

rss_1.0 rss_2.0 atom_1.0