Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

Abstract

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported, SiGe-Si technology has been developed leading to SiGe-Si HBT's with f(T) = 23 GHz and f(max) = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at lambda = 850 nm and bandwidth of 450 MHz, SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB.Omega and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.