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Showing results 1 to 8 of 8

1
1.3 μm)를 버퍼로 이용하는 HEMT 구조에서의 광전자 소자 집적에 관한 연구 = InGaAsP(λglink

차정호; Cha, Jung-Ho; et al, 한국과학기술원, 2006

2
A Sub-100 μW Ku-Band RTD VCO for Extremely Low Power Applications

Jeong, Yong-Sik; Choi, Sun-Kyu; Yang, Kyoung-Hoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.9, pp.569 - 571, 2009-09

3
Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Device for Monolithic 3D RF Applications

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Sanghyeon, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.598 - 601, 2023-04

4
Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits

Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Duckhyun; Jo, Eunju; Jeong, Hakcheon; et al, ACS NANO, v.16, no.6, pp.9031 - 9040, 2022-06

5
Passivation효과를 고려한 InP기반 HEMT의 공정 최적화 = Fabrication process optimization for InP-based HEMTs considering the passivation effectslink

김대희; Kim, Dae-Hee; et al, 한국과학기술원, 2003

6
Trap의 영향을 고려한 고주파 HEMT 잡음 모델링에 관한 연구 = Microwave HEMT noise modeling considering trap effectslink

황민지; Hwang, Min-Ji; et al, 한국과학기술원, 2005

7
다양한 Gate insulator 를 이용한 고전력 AlGaN/GaN MIS-HEMT 제작 = Fabrication of high-breakdown AlGaN/GaN MIS-HEMTs using various gate insulatorslink

고광의; Ko, Kwang-Ui; et al, 한국과학기술원, 2007

8
횡 전달 방식의 양자우물 적외선 수광 소자 = Lateral transport quantum well infrared photodetectorlink

엄준호; Oum, Joon-Ho; et al, 한국과학기술원, 2004

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