Browse "School of Electrical Engineering(전기및전자공학부)" by Author Ishiwara, H
Showing results 1 to 9 of 9
| Electron-Beam Exposure Epitaxy(EBE-epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures Lee, Hee Chul; Asano, T; Ishiwara, H; Furukawa, S, Extended Abstracts 19th Conf. on Solid State Devices and Materials, pp.581 - 584, 1987 |
| Electron-Beam exposure Heteroepitaxial Growth of GaAs/CaF2/Si Structures Lee, Hee Chul; Furukawa, S; Ishiwara, H; Asano, T, Proc. of SPIE symp., pp.139 - 145, 1988 |
| Formation of GaAs-SOI on Si Substrate By Use of Fluoride Insulators Lee, Hee Chul; Asano, T; Ishiwara, H; Tsutsui, K; Furukawa, S, Extended Abstracts 17th Conf. on Solid State Devices and Materials, pp.217 - 220, 1985 |
| Formation of SOI-GaAs on (Ca,Sr)F2/GaAs Structures Lee, Hee Chul; Tsutsui, K; Ishiwara, H; Asano, T; Furukawa, S, Inst. Phys. Conf. Ser, pp.109 - 114, 1985 |
| Growth of Ge and GaAs Films on Electron-Beam Exposed CaF2/Si(111)Structures Lee, Hee Chul; Ishiwara, H; Kanemaru, S; Furukawa, S, Proc. 2nd Int. Symp. on Si MBE, ed. by J .C .Bean and L . J . Schowalter(the Electrochemical, pp.182 - 190, 1987 |
| Heteroepitaxy of Si, Ge and GaAs Films on CaF2/Si Structures Lee, Hee Chul; Ishiwara, H; Asano, T; Kuriyama, Y; Seki, K; Furuk, S, Mat. Res. Soc. Symp. Proc, pp.105 - 114, 1986 |
| Improvement of the Quality of GaAs Films on Fluorides Using Electron-Beam Exposure Epitaxy(EBE-Epitaxy) Lee, Hee Chul; Kanemaru, S; Ishiwara, H; Furukawa, S, Proc. 18th symp. on Ion Implantation and Submicron Fabrication, Saitama Japen, pp.37 - 40, 1987 |
| Layered Structures Composed of Si, Ge, GaAs and Fluorides Lee, Hee Chul; Ishiwara, H; Asano, T; Tsutsui, K; Furukawa, S, Mat. Res. Soc. Symp. Proc, pp.241 - 251, 1988 |
| Role of As Atoms Absorbed on the Uppermose CaF2 Surface in the Electron-Beam exposure and Epitaxy for GaAs/CaF2/Si Structures Lee, Hee Chul; Ishiwara, H; Furukawa, S, Proc. 20th Symp. on lon Implantation and Submicron Fabrication, Saitama Japan, pp.9 - 12, 1989 |
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