Electron-Beam Exposure Epitaxy(EBE-epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures

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Issue Date
1987
Language
ENG
Citation

Extended Abstracts 19th Conf. on Solid State Devices and Materials, pp.581 - 584

URI
http://hdl.handle.net/10203/111482
Appears in Collection
EE-Conference Papers(학술회의논문)
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