DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hee Chul | - |
dc.contributor.author | Asano, T | - |
dc.contributor.author | Ishiwara, H | - |
dc.contributor.author | Furukawa, S | - |
dc.date.accessioned | 2013-03-14T17:47:56Z | - |
dc.date.available | 2013-03-14T17:47:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1987 | - |
dc.identifier.citation | Extended Abstracts 19th Conf. on Solid State Devices and Materials, v., no., pp.581 - 584 | - |
dc.identifier.uri | http://hdl.handle.net/10203/111482 | - |
dc.language | ENG | - |
dc.title | Electron-Beam Exposure Epitaxy(EBE-epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 581 | - |
dc.citation.endingpage | 584 | - |
dc.citation.publicationname | Extended Abstracts 19th Conf. on Solid State Devices and Materials | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Asano, T | - |
dc.contributor.nonIdAuthor | Ishiwara, H | - |
dc.contributor.nonIdAuthor | Furukawa, S | - |
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