Showing results 11 to 16 of 16
Influence of High-Pressure Annealing Conditions on Ferroelectric and Interfacial Properties of Zr-Rich HfxZr1-xO2 Capacitors Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp.1996 - 2002, 2021-04 |
Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfxZr1-xO2 Capacitors Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.331 - 334, 2021-03 |
Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02 |
Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; Jung, Minhyun; Kim, Chaeheon; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09 |
Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; Shin, Hunbeom; Lee, Sangho; Kim, Giuk; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01 |
Sub 5 angstrom-EOT HfxZr1-xO2 for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid Cooling Process Das, Dipjyoti; Buyantogtokh, Batzorig; Gaddam, Venkateswarlu; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.1, pp.103 - 108, 2022-01 |
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