Showing results 1 to 8 of 8
Band Alignment in WSe2-Graphene Heterostructures Kim, Kyounghwan; Larentis, Stefano; Fallahazad, Babak; Lee, Kayoung; Xue, Jiamin; Dillen, David C.; Corbet, Chris M.; et al, ACS NANO, v.9, no.4, pp.4527 - 4532, 2015-04 |
Flexible and Transparent Thin Film Transistor Based on 2D Materials for Active-Matrix Display Park, Hamin; Oh, Dong Sik; Lee, Khang June; Jung, Dae Yool; Lee, Seunghee; Yoo, Seunghyup; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.4749 - 4754, 2020-01 |
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures Fallahazad, Babak; Lee, Kayoung; Kang, Sangwoo; Xue, Jiamin; Larentis, Stefano; Corbet, Christopher; Kim, Kyounghwan; et al, NANO LETTERS, v.15, no.1, pp.428 - 433, 2015-01 |
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01 |
Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Lee, Jae Eun; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218, 2018-11 |
Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; Kim, Hojin; Choi, Sung-Yool, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10 |
광화학 기상 증착법을 이용한 이종접합 태양전지의 제작 = Fabrication of heterostructure solar cell using photo-CVD methodlink 강상정; Kang, Sang-Jung; et al, 한국과학기술원, 2008 |
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