Showing results 3 to 6 of 6
Large-signal modeling of InP/InGaAs single heterojunction bipolar transistors including thermal and impact ionization effects = 열효과와 Impact ionization 효과를 포함한 InP/InGaAs 단일 이종접합 바이폴라 트랜지스터 대신호 모델링link Kim, Tae-Ho; 김태호; et al, 한국과학기술원, 2002 |
Novel extraction method including self-heating and ambient temperature effects for a large-signal model of a HBT Park, HM; Koh, K; Hong, Songcheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, no.6, pp.1025 - 1035, 2002-12 |
RF power amplifiers using magnetically coupled line transformers = 자기적으로 결합된 전송선을 이용한 초고주파 전력 증폭기link Lee, Dong-Ho; 이동호; et al, 한국과학기술원, 2007 |
Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure using the redox solution of I-2/KI Kim, DH; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, no.3A, pp.253 - 255, 1997-03 |
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