Spontaneous emission factor of oxidized vertical-cavity surface-emitting lasers from the measured below-threshold cavity loss

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A method to estimate the spontaneous emission factor beta is proposed and applied to the 780 nm oxidized vertical-cavity surface-emitting lasers. The proportionality of the measured cavity loss multiplied by optical power to injected current is used. Our results agree better with theoretical calculations than those of conventional light-current curve fitting. The spontaneous emission factor of 0.0021 is obtained for a 2-mu m-square device at room temperature. Since only the below-threshold information of cavity loss and output power are used in our method, the obtained beta values are independent of any complex and unexpected above-threshold effects such as thermally induced mode-size contraction, as they should be. (C) 1997 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1997-05
Language
English
Article Type
Article
Keywords

SEMICONDUCTOR-LASERS

Citation

APPLIED PHYSICS LETTERS, v.70, no.18, pp.2344 - 2346

ISSN
0003-6951
DOI
10.1063/1.118869
URI
http://hdl.handle.net/10203/19304
Appears in Collection
PH-Journal Papers(저널논문)
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