DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, JH | ko |
dc.contributor.author | Ju, YG | ko |
dc.contributor.author | Shin, HE | ko |
dc.contributor.author | Lee, Yong-Hee | ko |
dc.date.accessioned | 2010-09-08 | - |
dc.date.available | 2010-09-08 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.70, no.18, pp.2344 - 2346 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/19304 | - |
dc.description.abstract | A method to estimate the spontaneous emission factor beta is proposed and applied to the 780 nm oxidized vertical-cavity surface-emitting lasers. The proportionality of the measured cavity loss multiplied by optical power to injected current is used. Our results agree better with theoretical calculations than those of conventional light-current curve fitting. The spontaneous emission factor of 0.0021 is obtained for a 2-mu m-square device at room temperature. Since only the below-threshold information of cavity loss and output power are used in our method, the obtained beta values are independent of any complex and unexpected above-threshold effects such as thermally induced mode-size contraction, as they should be. (C) 1997 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SEMICONDUCTOR-LASERS | - |
dc.title | Spontaneous emission factor of oxidized vertical-cavity surface-emitting lasers from the measured below-threshold cavity loss | - |
dc.type | Article | - |
dc.identifier.wosid | A1997WZ07600004 | - |
dc.identifier.scopusid | 2-s2.0-0031554216 | - |
dc.type.rims | ART | - |
dc.citation.volume | 70 | - |
dc.citation.issue | 18 | - |
dc.citation.beginningpage | 2344 | - |
dc.citation.endingpage | 2346 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.118869 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Yong-Hee | - |
dc.contributor.nonIdAuthor | Shin, JH | - |
dc.contributor.nonIdAuthor | Ju, YG | - |
dc.contributor.nonIdAuthor | Shin, HE | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SEMICONDUCTOR-LASERS | - |
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