Spontaneous emission factor of oxidized vertical-cavity surface-emitting lasers from the measured below-threshold cavity loss

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dc.contributor.authorShin, JHko
dc.contributor.authorJu, YGko
dc.contributor.authorShin, HEko
dc.contributor.authorLee, Yong-Heeko
dc.date.accessioned2010-09-08-
dc.date.available2010-09-08-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.70, no.18, pp.2344 - 2346-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/19304-
dc.description.abstractA method to estimate the spontaneous emission factor beta is proposed and applied to the 780 nm oxidized vertical-cavity surface-emitting lasers. The proportionality of the measured cavity loss multiplied by optical power to injected current is used. Our results agree better with theoretical calculations than those of conventional light-current curve fitting. The spontaneous emission factor of 0.0021 is obtained for a 2-mu m-square device at room temperature. Since only the below-threshold information of cavity loss and output power are used in our method, the obtained beta values are independent of any complex and unexpected above-threshold effects such as thermally induced mode-size contraction, as they should be. (C) 1997 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSEMICONDUCTOR-LASERS-
dc.titleSpontaneous emission factor of oxidized vertical-cavity surface-emitting lasers from the measured below-threshold cavity loss-
dc.typeArticle-
dc.identifier.wosidA1997WZ07600004-
dc.identifier.scopusid2-s2.0-0031554216-
dc.type.rimsART-
dc.citation.volume70-
dc.citation.issue18-
dc.citation.beginningpage2344-
dc.citation.endingpage2346-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.118869-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorShin, JH-
dc.contributor.nonIdAuthorJu, YG-
dc.contributor.nonIdAuthorShin, HE-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSEMICONDUCTOR-LASERS-
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