X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

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The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.
Publisher
AMER CHEMICAL SOC
Issue Date
2014-02
Language
English
Article Type
Article
Keywords

MAGNETORESISTIVE MANGANITE; MEMRISTIVE DEVICES; MEMORY; TIO2; FILMS

Citation

ACS NANO, v.8, no.2, pp.1584 - 1589

ISSN
1936-0851
DOI
10.1021/nn405867p
URI
http://hdl.handle.net/10203/188799
Appears in Collection
MS-Journal Papers(저널논문)
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