X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

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dc.contributor.authorChang, Seo Hyoungko
dc.contributor.authorKim, Junghoko
dc.contributor.authorPhatak, Charudattako
dc.contributor.authorD''Aquila, Kennethko
dc.contributor.authorKim, Seong Keunko
dc.contributor.authorKim, Jiyoonko
dc.contributor.authorSong, Seul Jiko
dc.contributor.authorHwang, Cheol Seongko
dc.contributor.authorEastman, Jeffrey A.ko
dc.contributor.authorFreeland, John W.ko
dc.contributor.authorHong, Daniel Seungbumko
dc.date.accessioned2014-08-29T01:33:57Z-
dc.date.available2014-08-29T01:33:57Z-
dc.date.created2014-04-07-
dc.date.created2014-04-07-
dc.date.created2014-04-07-
dc.date.issued2014-02-
dc.identifier.citationACS NANO, v.8, no.2, pp.1584 - 1589-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10203/188799-
dc.description.abstractThe interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectMAGNETORESISTIVE MANGANITE-
dc.subjectMEMRISTIVE DEVICES-
dc.subjectMEMORY-
dc.subjectTIO2-
dc.subjectFILMS-
dc.titleX-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells-
dc.typeArticle-
dc.identifier.wosid000332059200054-
dc.identifier.scopusid2-s2.0-84894630635-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue2-
dc.citation.beginningpage1584-
dc.citation.endingpage1589-
dc.citation.publicationnameACS NANO-
dc.identifier.doi10.1021/nn405867p-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.nonIdAuthorChang, Seo Hyoung-
dc.contributor.nonIdAuthorKim, Jungho-
dc.contributor.nonIdAuthorPhatak, Charudatta-
dc.contributor.nonIdAuthorD''Aquila, Kenneth-
dc.contributor.nonIdAuthorKim, Seong Keun-
dc.contributor.nonIdAuthorKim, Jiyoon-
dc.contributor.nonIdAuthorSong, Seul Ji-
dc.contributor.nonIdAuthorHwang, Cheol Seong-
dc.contributor.nonIdAuthorEastman, Jeffrey A.-
dc.contributor.nonIdAuthorFreeland, John W.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorresistive switching-
dc.subject.keywordAuthorX-ray irradiation-
dc.subject.keywordAuthorphotovoltaic effect-
dc.subject.keywordAuthorMagneli phase-
dc.subject.keywordAuthorJoule heating-
dc.subject.keywordAuthordefect generation-
dc.subject.keywordAuthorresistive switching-
dc.subject.keywordAuthorX-ray irradiation-
dc.subject.keywordAuthorphotovoltaic effect-
dc.subject.keywordAuthorMagneli phase-
dc.subject.keywordAuthorJoule heating-
dc.subject.keywordAuthordefect generation-
dc.subject.keywordPlusMAGNETORESISTIVE MANGANITE-
dc.subject.keywordPlusMEMRISTIVE DEVICES-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusTIO2-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusMAGNETORESISTIVE MANGANITE-
dc.subject.keywordPlusMEMRISTIVE DEVICES-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusTIO2-
dc.subject.keywordPlusFILMS-
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