Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method
- Publisher
- VLSI Symposium
- Issue Date
- 2014-06-11
- Language
- English
- Citation
2014 Symposium on VLSI Technology
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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