Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Yunsang | ko |
| dc.contributor.author | Chung, Wonil | ko |
| dc.contributor.author | Seo, Yujin | ko |
| dc.contributor.author | Lee, Choong-Ho | ko |
| dc.contributor.author | Sohn, Dong Kyun | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.date.accessioned | 2014-08-28T01:36:08Z | - |
| dc.date.available | 2014-08-28T01:36:08Z | - |
| dc.date.created | 2014-05-01 | - |
| dc.date.created | 2014-05-01 | - |
| dc.date.issued | 2014-06-11 | - |
| dc.identifier.citation | 2014 Symposium on VLSI Technology | - |
| dc.identifier.uri | http://hdl.handle.net/10203/187574 | - |
| dc.language | English | - |
| dc.publisher | VLSI Symposium | - |
| dc.title | Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-84907695636 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 2014 Symposium on VLSI Technology | - |
| dc.identifier.conferencecountry | US | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Shin, Yunsang | - |
| dc.contributor.nonIdAuthor | Chung, Wonil | - |
| dc.contributor.nonIdAuthor | Seo, Yujin | - |
| dc.contributor.nonIdAuthor | Lee, Choong-Ho | - |
| dc.contributor.nonIdAuthor | Sohn, Dong Kyun | - |
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