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Showing results 1 to 5 of 5

1
Dependence of the AlSb buffers on GaSb/GaAs(001) heterostructures

Kim, H. S.; Noh, Y. K.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.; Kim, Y. H.; Lee, JeongYong; et al, JOURNAL OF CRYSTAL GROWTH, v.301, pp.230 - 234, 2007-04

2
Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05

3
Dependence of the optical properties on the temperatures in multiple-stacked InAs/GaAs quantum dots grown on GaAs (001) substrates

Lee, HS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.258, pp.256 - 260, 2003-11

4
Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate

Noh, Y. K.; Park, S. R.; Kim, M. D.; Kwon, Y. J.; Oh, J. E.; Kim, Y. H.; Lee, JeongYong; et al, JOURNAL OF CRYSTAL GROWTH, v.301, pp.244 - 247, 2007-04

5
Observation of V-shaped defects in the growth of In0.8Al0.2Sb/InSb layers: Temperature and V/III flux ratio dependences

Kim, Y. H.; Lee, JeongYong; Noh, Y. G.; Kim, M. D.; Kwon, Y. J.; Oh, J. E., JOURNAL OF CRYSTAL GROWTH, v.296, no.1, pp.75 - 80, 2006-10

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