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1
A comparative study on the properties of TiN films prepared by chemical vapor deposition enhanced by rf plasma and by electron cyclotron resonance plasma

Kim, JS; Jun, BH; Lee, EJ; Hwang, CY; Lee, Won-Jong, THIN SOLID FILMS, v.292, no.1-2, pp.124 - 129, 1997-01

2
Effects of deposition parameters on composition, structure, resistivity and step coverage of TiN thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Kim, JS; Lee, EJ; Baek, JT; Lee, Won-Jong, THIN SOLID FILMS, v.305, no.1-2 , pp.103 - 109, 1997-04

3
Effects of the addition of CF4, Cl2, and N2 to O2 ECR plasma on the etch rate, selectivity, and etched profile of RuO2 film

Lee, EJ; Kim, JS; Kim, JW; Baik, KH; Lee, Won-Jong, Proceedings of the 1997 MRS Fall Symposium, v.493, pp.183 - 188, 1997-11-30

4
Reactive ion etching mechanism of RuO2 thin films in oxygen plasma with the addition of CF4, Cl-2, and N-2

Lee, EJ; Kim, JW; Lee, Won-Jong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.5A, pp.2634 - 2641, 1998-05

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