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THE EFFECTS OF POINT-DEFECTS ON THE ELECTRICAL ACTIVATION OF SI-IMPLANTED GAAS DURING RAPID THERMAL ANNEALING LEE, JL; WEI, L; TANIGAWA, S; NAKAGAWA, T; OHTA, K; Lee, JeongYong, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.39, no.1, pp.176 - 183, 1992-01 |
VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING LEE, JL; UEDONO, A; TANIGAWA, S; Lee, JeongYong, JOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6153 - 6158, 1990-05 |
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