VACANCY-TYPE DEFECTS IN SI+-IMPLANTED GAAS AND ITS EFFECTS ON ELECTRICAL ACTIVATION BY RAPID THERMAL ANNEALING
- Publisher
- AMER INST PHYSICS
- Issue Date
- 1990-05
- Language
- English
- Article Type
- Article
- Citation
JOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6153 - 6158
- ISSN
- 0021-8979
- Appears in Collection
- MS-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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