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Novel resistive layer structure using via holes of an insulating interdielectric as a current path Ha J.K.; Chung B.H.; Han S.Y.; Choi J.O.; Kim, Ho Gi, 13th International Vaccum Microelectronics Conference, v.19, no.3, pp.929 - 932, 2000-08-14 |
The drastic changes in the electrical properties of doped hydrogenated amorphous silicon as a resistive layer material during vacuum packaging processes in field emission display Ha J.K.; Chung B.H.; Han S.Y.; Choi J.O.; Kim, Ho Gi, Proceedings of the 14th International Vacuum Microelectronics Conference, pp.217 - 218, 2001-08-12 |
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